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ASAT35L 数据表(PDF) 1 Page - Advanced Semiconductor |
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ASAT35L 数据表(HTML) 1 Page - Advanced Semiconductor |
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1 / 1 page ![]() A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 20 mA 50 V BVCES IC = 20 mA 50 V BVEBO IE = 10 mA 3.5 V ICES VCE = 28 V 5.0 mA hFE VCE = 5 V IC = 2.0 A 20 300 --- PG ηηηη C VCE = 28 V POUT = 35 W f = 1500 - 1600 MHz 8.0 45 9.0 50 dB % ZCL ZIN VCE = 28 V POUT = 35 W f = 1500 MHz 3.0 + j0.5 4.0 + j15.0 Ohms ZCL ZIN VCE = 28 V POUT = 35 W f = 1600 MHz 1.8 + j1.0 5.5 + j16.2 Ohms NPN RF POWER TRANSISTOR ASAT35L DESCRIPTION: The ASAT35L is a Common Base Transistor Designed for L-Band Satcom Amplifier Applications. FEATURES INCLUDE: •••• Input/Output Matching Networks • Gold Metallization •••• Emitter Ballasting MAXIMUM RATINGS I C 3.5 A V CBO 50 V P DISS 55 W @ TC = 25 OC T J -55 OC to+200 OC T STG -55 OC to+200 OC θθθθ JC 2.6 OC/W PACKAGE STYLE 400 2L FLG 1 = Collector 2 & 4 = Base 3 = Emitter |
类似零件编号 - ASAT35L |
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类似说明 - ASAT35L |
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