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ESDALC6V1M3 数据表(PDF) 2 Page - STMicroelectronics |
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ESDALC6V1M3 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 8 page ![]() Characteristics ESDALC6V1M3 2/8 1 Characteristics Table 1. Absolute ratings (TAMB = 25° C - limiting values) Symbol Parameter Value Unit VPP ESD discharge IEC61000-4-2 air discharge IEC61000-4-2 contact discharge ± 15 ± 8 kV PPP Peak pulse power dissipation (8/20 µs)(1) 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Tj initial = TAMB 30 W Ipp Repetitive peak pulse current (8/20 µs) 3 A Tj Junction temperature 125 ° C Tstg Storage temperature range -55 + 150 ° C TL Maximum lead temperature for soldering during 10 s 260 ° C TOP Operating temperature range -40 + 125 ° C Table 2. Electrical characteristics (TAMB = 25° C) Symbol Parameter VRM Stand-off voltage VBR Breakdown voltage VCL Clamping voltage IRM Leakage current @ VRM IPP Peak pulse current αT Voltage temperature coefficient VF Forward voltage drop Parameter Test condition Min Typ Max Unit VBR IR = 1 mA 6.1 7.2 V IRM VRM = 5 V 0.5 µA Rd 1.1 Ω αT IR = 1 mA 4.2 10-4/°C C VR = 0 V, F = 1 MHz, VOSC = 30 mV 11 pF VV V I RM I R I PP V I I F V V Slope= 1/ Rd V V CL V BR RM V F |
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