PD2M

2mm InGaAs Photodiode

FEATURES

•

Planar Structure

•

Dielectric Passivation

•

High Shunt Resistance

•

High Responsivity

APPLICATIONS

•

Sensing

•

High Sensitivity Instrumentation

PD2M-0xx

Ceramic Sub-Mount

PD2M-1xx

TO5 can Package

PRODUCT DESCRIPTION

The PD2M is an InGaAs photodiode with a

photosensitive region 2mm in diameter.

Applications include sensing and other high

sensitivity instrumentation. Class A devices

feature very low dark current and high shunt

resistance.

High reliability is assured through planar

semiconductor design and dielectric passivation.

The device can be assembled on a ceramic sub-

mount or in an hermetic TO5 can. Custom

packages are an option.

ELECTRICAL CHARACTERISTICS

Table 1: Electrical Specifications

PARAMETER

MIN

TYP

MAX

UNIT

(1)

-

55

-

nA

Capacitance

(2)

-

400

-

pF

Responsivity at 1310nm

0.80

0.90

-

A/W

Responsivity at 1550nm

0.85

0.95

-

A/W

Rise/Fall time

-

60

-

ns

Shunt Resistance (Class A)

(2)

5

-

-

MΩ

(1) 1V reverse bias

(2) 0V reverse bias