05/2003

RFS1003

5.1-5.9 GHz U-NII Power Amplifier

Applications

•

U-NII fixed-wireless CPE

•

5 GHz ISM band wireless equipment

•

WLAN/802.11a/HIPERLAN/2

1

2

3

4

5

6

19

20

21

22

23

24

18

17

16

15

14

13

12

11

10

9

8

7

N/C

GND

RF OUT

RF OUT

RF OUT

GND

N/C

GND

RF IN

GND

N/C

N/C

Interstage

Match

Interstage

Match

Input

Match

Functional Block Diagram

Product Description

The RFS1003 power amplifier is a high-power, high-

performance GaAs MESFET IC designed for use in

transmit applications in the 5.1-5.9 GHz frequency

band. With a P1dB of 29 dBm, the device is ideal as a

final stage for wireless applications requiring high

transmit linearity. The input of the PA is matched to 50

ohms and the output can be easily matched for optimum

linearity and power performance at the desired

frequency of operation between 5.1 and 5.9 GHz.

Product Features

•

29 dBm P1dB@7V

•24 dBm P1dB@3V

•

20 dB gain

•

Input matched to 50 ohms

•

Simple output matching

0.05

2.80 SQ

1.00

0.275

0.225

0.45

0.35

0.50 TYP

TOP VIEW

SIDE VIEW

BOTTOM VIEW

1

1 ALL DIMENSIONS ARE IN

MILLIMETERS, ANGLES IN DEGREES.

2 THE TERMINAL #1 IDENTIFIER AND

PAD NUMBERING CONVENTION SHALL

CONFORM TO JESD 95-1 SPP-012

3 LEAD COPLANARITY: 0.05 MAX.

4 DIMENSION APPLIES TO METALLIZED

PAD AND IS MEASURED BETWEEN 0.25

AND 0.30 MM FROM PAD TIP.

4

24

Pin 1

4.00

4.00

INDEX AREA

1.00

0.80

4x4 mm Package Outline