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FNETHE025 数据表(PDF) 2 Page - Diodes Incorporated |
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FNETHE025 数据表(HTML) 2 Page - Diodes Incorporated |
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2 / 2 page ![]() All specifications are subject to change without notice. FNETHE025 Rev F 07/13/12 3.3V CMOS Low-Jitter 25 MHz GbE XO FNETHE025 FNETHE025 025 TM Output Enable / Disable Function Min. Input Voltage (pin 1), Output Enable 0.7 VDD Vor open Input Voltage (pin 1), Output Disable (low power standby) 0.3 VDD VOutput is Hi-Z Internal Pullup Resistance 30 Output Disable Delay 50 ns Output Enable Delay 2ms Electrical Performance Min. Output Frequency 25 MHz Supply Voltage VDD 2.97 3.3 3.63 V Supply Current, Output Enabled 15 mA Supply Current, Output Disabled 10 μA Frequency Stability ±25 ppm See Note 1 below Operating Temperature Range -20 +70 °C Output Logic 0, VOL 10% VDD V Output Logic 1, VOH 90% VDD V Output Load 15 pF Duty Cycle 45 55 % Measured 50% VDD Rise and Fall Time 7 ns Measured 20/80% of waveform Jitter, Phase, RMS(1- 1 ps 12kHz~20MHz Frequency Band Jitter, pk-pk 50 ps 100.000 random periods Notes: 1. Stability includes all combinations of operating temperature, load changes, rated input (supply) voltage changes, initial calibration tolerance (25°C), aging (1 year at 25°C average effective ambient temperature), shock and vibration. Absolute Maximum Ratings Min. Storage Temperature -55 +125 °C 2 12-0051 |
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