126

GaAs Infrared Emitting Diodes

TO-46 Flat Window Package — 940 nm

VTE1013

CASE 24A

TO-46 HERMETIC (Flat Window)

CHIP SIZE: .018" X .018"

DESCRIPTION

This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for higher

current pulse applications.

Maximum Temperatures

Storage and Operating:

-55°C to 125°C

Continuous Power Dissipation:

200 mW

Derate above 30°C:

2.11 mW/°C

Maximum Continuous Current:

100 mA

Derate above 30°C:

1.05 mA/°C

Peak Forward Current, 10 µs, 100 pps:

3.0 A

Temp. Coefficient of Power Output (Typ.):

-.8%/°C

Maximum Reverse Voltage:

5.0V

10 µA

Peak Wavelength (Typical):

940 nm

Junction Capacitance @ 0V, 1 MHz (Typ.):

35 pF

Rise:1.0 µs

Fall: 1.0 µs

Lead Soldering Temperature:

260°C

(1.6 mm from case, 5 seconds max.

Refer to General Product Notes, page 2.

Part Number

Output

Forward Drop

Half Power Beam

Angle

Irradiance

Radiant

Intensity

Total Power

Test

Current

Condition

θ

1/2

distance

Diameter

mW/sr

mW

mA

(Pulsed)

Volts

Typ.

Min.

Typ.

mm

mm

Min.

Typ.

Typ.

Max.

VTE1013

2.1

2.7

36

6.4

27

30

1.0

1.9

2.5

±35°

PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA

Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto