PJS6830

January 20,2022

PJS6830-REV.01

Page 1

20V Dual N-Channel Enhancement Mode MOSFET

– ESD Protected

Voltage

20 V

Current

2 A

SOT-23 6L

Unit: inch(mm)

Features

 RDS(ON) , VGS@4.5V, ID@2.0A<150m

Ω

 RDS(ON) , VGS@2.5V, ID@1.5A<215m

Ω

 RDS(ON) , VGS@1.8V, ID@0.5A<400m

Ω

 Advanced Trench Process Technology

 Specially Designed for Switch Load, PWM Application, etc.

 ESD Protected 2KV HBM

 Lead free in compliance with EU RoHS 2.0

 Green molding compound as per IEC 61249 standard

Mechanical Data

 Case: SOT-23 6L Package

 Terminals: Solderable per MIL-STD-750, Method 2026

 Approx. Weight: 0.0005 ounces, 0.0141 grams

PARAMETER

SYMBOL

LIMIT

UNITS

Drain-Source Voltage

VDS

20

V

Gate-Source Voltage

VGS

+8

V

Continuous Drain Current

ID

2

A

Pulsed Drain Current(Note 4)

IDM

8

A

Power Dissipation

Ta=25oC

PD

1.25

W

Derate above 25oC

10

mW/ oC

Operating Junction and Storage Temperature Range

TJ,TSTG

-55~150

oC

Typical Thermal Resistance

-

Junction to Ambient(Note 3)

RθJA

100

oC/W

Maximum Ratings and Thermal Characteristics (TA=25

o

C unless otherwise noted)