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MBT3946DW1T1 数据表(PDF) 3 Page - E-Tech Electronics LTD

部件名 MBT3946DW1T1
功能描述  Dual General Purpose Transistors
PDF  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  ETL [E-Tech Electronics LTD]
网页  http://e-tech.com.hk
标志 ETL - E-Tech Electronics LTD

MBT3946DW1T1 数据表(HTML) 3 Page - E-Tech Electronics LTD

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MBT3904–3/12
MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
Input Impedance
h ie
k
Ω
(V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)
MBT3904DW1T1 (NPN)
1.0
10
(V CE = –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz)
MBT3906DW1T1 (PNP)
2.0
12
Voltage Feedback Ratio
h re
X 10 –4
(V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)
MBT3904DW1T1 (NPN)
0.5
8.0
(V CE = –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz)
MBT3906DW1T1 (PNP)
0.1
10
Small–Signal Current Gain
h fe
—
(V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)
MBT3904DW1T1 (NPN)
100
400
(V CE = –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz)
MBT3906DW1T1 (PNP)
100
400
Output Admittance
h oe
µmhos
(V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)
MBT3904DW1T1 (NPN)
1.0
40
(V CE = –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz)
MBT3906DW1T1 (PNP)
3.0
60
Noise Figure
NF
dB
(V CE = 5.0 Vdc, I C = 100
µAdc,
MBT3904DW1T1 (NPN)
—
5.0
R S = 1.0 k W, f = 1.0 kHz)
(V CE = –5.0 Vdc, I C = –100
µAdc,
MBT3906DW1T1 (PNP)
—
4.0
R S = 1.0 k W, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time (V CC = 3.0 Vdc, V BE = –0.5 Vdc)
MBT3904DW1T1 (NPN)
t d
—35
ns
(V CC = –3.0 Vdc, V BE = 0.5 Vdc)
MBT3906DW1T1 (PNP)
—
35
Rise Time (I C = 10 mAdc, I B1 = 1.0 mAdc)
MBT3904DW1T1 (NPN)
t r
—35
ns
(I C = –10 mAdc, I B1 = –1.0 mAdc)
MBT3906DW1T1 (PNP)
—
35
Storage Time (V CC = 3.0 Vdc, I C = 10 mAdc)
MBT3904DW1T1 (NPN)
t s
—
200
ns
(V CC = –3.0 Vdc, I C = –10 mAdc)
MBT3906DW1T1 (PNP)
—
225
Fall Time (I B1 = I B2 = 1.0 mAdc)
MBT3904DW1T1 (NPN)
t f
—50
ns
(I B1 = I B2 = –1.0 mAdc)
MBT3906DW1T1 (PNP)
—
70



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