2SC1815

2SC1815-O

2SC1815-Y

2SC1815-GR

2SC1815-BL

SILICON NPN TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2SC1815 Series

are silicon NPN transistors, manufactured by the

epitaxial planar process, designed for general purpose

amplifier applications.

MARKING: FULL PART NUMBER

MAXIMUM RATINGS: (TA=25°C unless otherwise noted)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

60

V

Collector-Emitter Voltage

VCEO

50

V

Emitter-Base Voltage

VEBO

5.0

V

Continuous Collector Current

IC

150

mA

Power Dissipation

PD

400

mW

Operating and Storage Junction Temperature

TJ, Tstg

-55 to +125

°C

Thermal Resistance

JA

250

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICBO

VCB=60V

100

nA

ICEO

VCE=50V

100

nA

IEBO

VEB=5.0V

100

nA

BVCBO

IC=100μA

60

V

BVCEO

IC=100μA

50

V

BVEBO

IE=100μA

5.0

V

VCE(SAT)

IC=100mA, IB=10mA

0.25

V

VBE(SAT)

IC=100mA, IB=10mA

1.0

V

VBE

IE=310mA

1.45

V

hFE

VCE=6.0V, IC=2.0mA (2SC1815)

70

700

hFE

VCE=6.0V, IC=2.0mA (2SC1815-O)

70

140

hFE

VCE=6.0V, IC=2.0mA (2SC1815-Y)

120

240

hFE

VCE=6.0V, IC=2.0mA (2SC1815-GR)

200

400

hFE

VCE=6.0V, IC=2.0mA (2SC1815-BL)

350

700

fT

VCE=10V, IC=1.0mA, f=30MHz

80

MHz

TO-92 CASE

R1 (10-May 2018)

www.centra lsemi.com