AP64060

Document number: DS44123 Rev. 2 - 2

5 of 18

www.diodes.com

August 2022

© Diodes Incorporated

AP64060

Electrical Characteristics (@ TJ = +25°C, VIN = 12V, unless otherwise specified. Min/Max limits apply across the recommended

junction temperature range, -40°C to +125°C, and input voltage range, 3.8V to 40V, unless otherwise specified.)

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

ISHDN

Shutdown Supply Current

VEN = 0V

—

1

10

μA

IQ

Supply Current (Quiescent)

VEN = Floating,

R2 = OPEN, No Load,

VBST - VSW = 5V

—

90

—

μA

UVLO

VIN Undervoltage Rising Threshold

—

—

4.2

4.4

V

VIN Undervoltage Hysteresis

—

—

440

—

mV

RDS(ON)1

High-Side Power MOSFET On-Resistance (Note 8)

—

—

600

—

mΩ

RDS(ON)2

Low-Side Power MOSFET On-Resistance (Note 8)

—

—

300

—

mΩ

IPEAK_LIMIT

HS Peak Current Limit (Note 8)

—

0.80

0.90

1.30

A

IVALLEY_LIMIT

LS Valley Current Limit (Note 8)

—

—

0.7

—

A

IPFMPK

PFM Peak Current Limit

VOUT = 5V, L =

10μH

—

40

—

mA

IZC

Zero Cross Current Threshold

—

—

10

—

mA

fSW

Oscillator Frequency

—

—

2

—

MHz

tON_MIN

Minimum On-Time

—

—

60

—

ns

VFB

Feedback Voltage

CCM, TJ = -40ºC to +125 ºC

784

800

816

mV

VEN_H

EN Logic High

—

—

1.21

1.25

V

VEN_L

EN Logic Low

—

1.03

1.10

—

V

tSS

Soft-Start Time

—

—

1

—

ms

TSD

Thermal Shutdown Threshold (Note 8)

—

—

170

—

°C

THys

Thermal Shutdown Hysteresis (Note 8)

—

—

35

—

°C

Note:

8. Compliance to the datasheet limits is assured by one or more methods: production test, characterization, and/or design.