MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

110

V

Collector-Emitter Voltage

VCEO

110

V

Emitter-Base Voltage

VEBO

5.0

V

Continuous Collector Current

IC

50

mA

Power Dissipation

PD

350

mW

Operating and Storage

Junction Temperature

TJ,Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

IEBO

VEB=5.0V

30

nA

BVCBO

IC=100µA

110

V

BVCEO

IC=1.0mA

110

V

BVEBO

IE=10µA

5.0

V

VCE(SAT)

IC=10mA, IB=1.0mA

0.30

V

VBE(ON)

VCE=6.0V, IC=1.0mA

0.55

0.65

V

fT

VCE=6.0V, IC=1.0mA

50

MHz

Cob

VCB=30V, IE=0, f=1.0MHz

3.0

pF

NF

VCE=5.0V, IC=100µA, RS=10kΩ

f=10Hz to 15.7KHz

3.0

dB

CMPT992

CMPT992P

CMPT992F

CMPT992E

MIN

MAX

MIN

MAX

MIN

MAX

MIN

MAX

hFE

VCE=6.0V, IC=100µA

150

-

150

-

150

-

150

-

hFE

VCE=6.0V, IC=1.0mA

200

800

200

400

300

600

400

800

CMPT992

CMPT992P

CMPT992F

CMPT992E

PNP SILICON

LOW NOISE TRANSISTOR

SOT-23 CASE

Central

Semiconductor Corp.

TM

R1 (13-April 2004)

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT992

types are PNP silicon low noise transistors

manufactured by the epitaxial planar process,

epoxy molded in a surface mount package,

designed for low noise amplifier applications

where a high BVCEO is required.

MARKING CODE: PLEASE SEE MARKING

CODE TABLE ON FOLLOWING PAGE.