DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT7410 type is

a PNP Low VCE (SAT) silicon transistor manufactured

by the epitaxial planar process and epoxy molded in an

SOT-23 surface mount package. This device is

designed for battery driven, handheld devices

requireing high current and Low VCE(SAT) voltages.

MARKING CODE: C741

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

40

V

Collector-Emitter Voltage

VCEO

25

V

Emitter-Base Voltage

VEBO

6.0

V

Collector Current

IC

1.0

A

Collector Current (Peak)

ICM

1.5

A

Power Dissipation

PD

350

mW

Operating and Storage

Junction Temperature

TJ,Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

ICBO

VCB=40V

100

nA

IEBO

VEB=6.0V

100

nA

BVCBO

IC=100µA

40

V

BVCEO

IC=10mA

25

V

BVEBO

IE=100µA

6.0

V

VCE(SAT)

IC=50mA, IB=5.0mA

25

50

mV

VCE(SAT)

IC=100mA, IB=10mA

40

75

mV

VCE(SAT)

IC=200mA, IB=20mA

80

150

mV

VCE(SAT)

IC=500mA, IB=50mA

150

250

mV

VCE(SAT)

IC=800mA, IB=80mA

220

400

mV

VCE(SAT)

IC=1.0A, IB=100mA

275

450

mV

VBE(SAT)

IC=800mA, IB=80mA

1.1

V

VBE(ON)

VCE=1.0V, IC=10mA

0.9

V

hFE

VCE=1.0V, IC=10mA

100

hFE

VCE=1.0V, IC=100mA

100

300

hFE

VCE=1.0V, IC=500mA

100

hFE

VCE=1.0V, IC=1.0A

50

fT

VCE=10V, IC=50mA, f=100MHz

100

MHz

Cob

VCB=10V, IE=0, f=1.0MHz

15

pF

CMPT7410

SURFACE MOUNT

PNP SILICON

LOW VCE (SAT) TRANSISTOR

SOT-23 CASE

Central

Semiconductor Corp.

TM

R0 (12-November 2004)