MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

20

V

Collector-Emitter Voltage

VCEO

20

V

Emitter-Base Voltage

VEBO

3.0

V

Collector Current (Continuous)

IC

50

mA

Power Dissipation

PD*

225

mW

Operating and Storage

Junction Temperature

TJ,Tstg

-55 to +150

°C

Thermal Resistance

ΘJA

556

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C UNLESS OTHERWISE NOTED)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICBO

VCB=10V

100

nA

IEBO

VEB=2.0V

100

nA

BVCBO

IC=10µA20

V

BVCEO

IC=1.0mA

20

V

BVEBO

IE=10µA

3.0

V

VCE(SAT)

IC=5.0mA, IB=500µA

0.5

V

VBE(ON)

VCE=10V, IC=5.0mA

0.9

V

hFE

VCE=10V, IC=5.0mA

60

fT

VCE=10V, IC=5.0mA, f=100MHz

600

MHz

Ccb

VCB=10V, IE=0, f=1.0MHz

0.85

pF

Cce

VCB=10V, IB=0, f=1.0MHz

0.65

pF

* FR-4 Epoxy PCB Substrate 1.6” x 1.6” x 0.06”\

CMPTH81

SURFACE MOUNT

PNP SILICON RF TRANSISTOR

SOT-23 CASE

Central

Semiconductor Corp.

TM

R3 (20-February 2003)

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPTH81

type is a PNP Silicon RF Transistor, epoxy

molded in a surface mount package, designed

for general RF amplifier applications.

MARKING CODE: C3D