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C43C2 数据表(PDF) 2 Page - Continental Device India Limited

部件名 C43C2
功能描述  PNP PLASTIC POWER TRANSISTOR
PDF  3 Pages
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制造商  CDIL [Continental Device India Limited]
网页  http://www.cdilsemi.com
标志 CDIL - Continental Device India Limited

C43C2 数据表(HTML) 2 Page - Continental Device India Limited

  C43C2 Datasheet HTML 1Page - Continental Device India Limited C43C2 Datasheet HTML 2Page - Continental Device India Limited C43C2 Datasheet HTML 3Page - Continental Device India Limited  
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Continental Device India Limited
Data Sheet
Page 2 of 3
Collector current (Peak)*
ICM
max.
5 A
Base current
IB
max.
2 A
Total power dissipation up to TA = 25°C
PD
max.
2.1 W
Total power dissipation up to TC = 25°C
PD
max.
12.5 W
Junction temperature
Tj
max.
150 ºC
Storage temperature
Tstg
–65 to +150 ºC
THERMAL RESISTANCE
From junction to case
Rth j–c
=10 °C/W
From junction to ambient
Rth j–a
=60 °C/W
CHARACTERISTICS
Tc = 25°C unless otherwise specified
Collector cutoff current
VBE = 0; VCE = Rated VCES
ICES
max.
10 µA
Emitter cut-off current
IC = 0; VEB = 5 V
IEBO
max.
100 µA
Breakdown sus. voltage
IC = 100 mA; IB = 0
VCEO(sus)*
min.
30 V
Saturation voltages
IC = 1 A; IB = 50 mA
VCEsat*
max.
0.5 V
IC = 1 A; IB = 100 mA
VBEsat*
max.
1.3 V
D.C. current gain
IC = 200 mA; VCE = 1 V
hFE*
min.
40
max.
120
IC = 1 A; VCE = 1 V
hFE*
min.
20
Transition frequency
IC = 20 mA; VCE = 4 V
fT
typ.
40 MHz
Collector capacitance
VCB = 10 V; IE = 0; f = 1 MHz
Ccbo
max.
125 pF
Switching time
Delay time + Rise time
IC = 1 A; IB1 = IB2 = 0.1 A
td+tr
typ.
50 ns
Storage time + Fall time
VCC = 30 V; tp = 25 µsec
ts
typ.
500 ns
tf
typ.
50 ns
* Pulsed test: PW = 300 ms; duty cycle = 2%.
C43C2



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