PNP EPITAXIAL PLANAR SILICON TRANSISTOR

CMBA857

SOT23

MARKING : AS BELOW

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector -Base Voltage

VCBO

60

V

Collector -Emitter Voltage

VCEO

50

V

Emitter Base Voltage

VEBO

6.0

V

Collector Current

IC

200

mA

Collector Power Dissipation

PC

200

mW

Junction Temperature

Tj

125

deg C

Storage Temperature

Tstg

-55 to +125

deg C

ELECTRICAL CHARACTERISTICS (Ta=25 deg C unless otherwise specified)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Collector -Emitter Voltage

VCEO

IC=100uA, IB=0

50

-

-

V

Collector Cut off Current

ICBO

VCB=60V, IE=0

-

-

100

nA

Emitter Cut off Current

IEBO

VEB=6V, IC=0

-

-

100

nA

DC Current Gain

hFE(1)

IC=1mA,VCE=6V

150

-

500

hFE(2)

IC=0.1mA,VCE=6V

90

-

-

Collector Emitter Saturation Voltage

VCE(Sat)

IC=100mA,IB=10mA

-

-

0.30

V

Base Emitter Saturation Voltage

VBE(Sat)

IC=100mA,IB=10mA

-

-

1.0

V

Dynamic Characteristics

Transition Frequency

ft

VCE=6V,IC=10mA,

-

200

-

MHz

Collector Output Capacitance

Cob

VCB=6V, IE=0

-

4.0

-

pF

f=1MHz

Noise Figure

NF

VCE=6V, IE=0.3mA

-

-

20

dB

f=100Hz, Rg=10kohms

CLASSIFICATION

E

F

hFE(1)

150-300

250-500

MARKING

PA

PB

PIN CONFIGURATION (PNP)

1 = BASE

2 = EMITTER

3 = COLLECTOR

2

1

3

Continental Device India Limited

Data Sheet

Page 1 of 3

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company