PNP EPITAXIAL PLANAR SILICON TRANSISTOR

CMBT200

CMBT200A

SOT23

MARKING : AS BELOW

Designed for General Purpose Amplifier Applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise noted)

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector -Base Voltage

VCBO

60

V

Collector -Emitter Voltage

VCEO

45

V

Emitter Base Voltage

VEBO

6.0

V

Collector Current - Continuous

IC

500

mA

Power Dissipation

PD

350

mW

Derate Above=25 deg C

2.8

mW/deg C

Operating And Storage Junction

Tj, Tstg

-55 to +150

deg C

Temperature Range

Thermal Resistance

Junction to Ambient

(Rth j-a)

357

deg C/W

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Noted)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

MAX

UNIT

Collector -Base Voltage

VCBO

IC=10uA, IE=0

60

-

V

Collector -Emitter Voltage

VCEO

IC=1mA, IB=0

45

-

V

Emitter Base Voltage

VEBO

IE=10uA, IC=0

6.0

-

V

Collector Cut off Current

ICBO

VCB=50V, IE=0

-

50

nA

ICES

VCE=4V, IE=0

-

50

nA

Emitter Cut off Current

IEBO

VEB=4V, IC=0

-

50

nA

DC Current Gain

hFE

IC=100uA,VCE=1V

CMBT200

80

-

CMBT200A

240

-

IC=10mA,VCE=1V

CMBT200

100

450

CMBT200A

300

600

IC=100mA,VCE=1V*

CMBT200A

100

-

IC=150mA,VCE=5V*

CMBT200

100

350

CMBT200A

100

-

PIN CONFIGURATION (PNP)

1 = BASE

2 = EMITTER

3 = COLLECTOR

2

1

3

Continental Device India Limited

Data Sheet

Page 1 of 3

Continental Device India Limited

An ISO/TS16949 and ISO 9001 Certified Company