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CMBT2222 数据表(PDF) 2 Page - Continental Device India Limited

部件名 CMBT2222
功能描述  SILICON PLANAR EPITAXIAL TRANSISTORS
PDF  4 Pages
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制造商  CDIL [Continental Device India Limited]
网页  http://www.cdilsemi.com
标志 CDIL - Continental Device India Limited

CMBT2222 数据表(HTML) 2 Page - Continental Device India Limited

  CMBT2222 Datasheet HTML 1Page - Continental Device India Limited CMBT2222 Datasheet HTML 2Page - Continental Device India Limited CMBT2222 Datasheet HTML 3Page - Continental Device India Limited CMBT2222 Datasheet HTML 4Page - Continental Device India Limited  
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Continental Device India Limited
Data Sheet
Page 2 of 4
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values
CMBT2222
CMBT2222A
Collector–base voltage (open emitter)
VCBO max.
60
75
V
Collector–emitter voltage (open base)
VCEO rnax.
30
40
V
Emitter–base voltage (open collector)
VEBO max. 5,0
6,0
V
Collector current (d.c,)
IC
max.
600
mA
Total power dissipation up to Tamb = 25 °C Ptot
max.
250
mW
Storage temperature range
Tstg
–55 to +150
° C
Junction temperature
Tj
max.
150
° C
THERMAL RESISTANCE
From junction to ambient
Rth j–a
500
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
CMBT2222
CMBT2222A
Collector cut–off current
IE = 0; VCB = 50 V
ICBO
<
0,01
µ A
IE = 0; VCB = 60 V
ICBO
<
0,01
µA
IE = 0; VCB = 50 V; Ti – 125 °C
ICBO
<10
µA
IE = 0; VCB = 60 V; Tj = 125 °C
ICBO
<–
10
µ A
VEB = 3 V; VCE = 60 V
ICEX
<–
10
nA
Base current
with reverse biased emitter junction
VFB = 3V; VCE = 60V
IBEX
<–
20
nA
Emitter cut–off current
IC = 0; VEB = 3V
IEBO
<–
10
nA
Saturation voltages
IC = 150 mA; lB = 15 mA
VCEsat <
400
300
mV
VBEsat <
1.3
V
VBEsat
0,6 to 1,2 V
IC = 500 mA; lB = 50 mA
VCEsat <
1.6
1.0
V
VBEsat <
2.6
2.0
V
Breakdown voltages
IC = 1,0µ A; IB = 0
V(BR)CEO >30
40
V
IC = 100µA; IE = 0
V(BR)CBO >60
75
V
IC = 0; IE = 10µAV(BR)EBO >
5,0
6,0
V
CMBT2222
CMBT2222A



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