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CMBT2369 数据表(PDF) 1 Page - Continental Device India Limited |
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CMBT2369 数据表(HTML) 1 Page - Continental Device India Limited |
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1 / 3 page ![]() Continental Device India Limited Data Sheet Page 1 of 3 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N–P N transistor Marking CMBT2369 = lJ ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) VCB0 max. 40 V Collector–emitter voltage (VBE = 0) VCES max. 40 V Collector–emitter voltage (open base) VCE0 max. 15 V Collector current (d.c. value) IC max. 500 mA Total power dissipation up to Tamb = 25 °C Ptot max. 250 mW D.C. current gain IC = 10mA; VCE = 1 V hFE 40 to 120 IC = 100 mA; VCE = 2 V hFE >20 Storage time ICon = IBon = IBoff = 10 mA ts <13 ns CMBT2369 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 2 1 SOT-23 Formed SMD Package Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
类似零件编号 - CMBT2369 |
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类似说明 - CMBT2369 |
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