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CMBT6517 数据表(PDF) 2 Page - Continental Device India Limited

部件名 CMBT6517
功能描述  HIGH-VOLTAGE TRANSISTOR
PDF  3 Pages
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制造商  CDIL [Continental Device India Limited]
网页  http://www.cdilsemi.com
标志 CDIL - Continental Device India Limited

CMBT6517 数据表(HTML) 2 Page - Continental Device India Limited

  CMBT6517 Datasheet HTML 1Page - Continental Device India Limited CMBT6517 Datasheet HTML 2Page - Continental Device India Limited CMBT6517 Datasheet HTML 3Page - Continental Device India Limited  
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Continental Device India Limited
Data Sheet
Page 2 of 3
CMBT6517
THERMAL CHARACTERISTICS
Tj = P (Rth j–t + Rth s–a) + Tamb
Thermal resistance
from junction to ambient
Rth j–a
556 °C/mW
CHARACTERISTICS (at TA = 25°C unless otherwise specified)
Collector–emitter breakdown voltage
–IC = 1 mA
–V(BR)CEO min.
350 V
Collector–base breakdown voltage
–IC = 100 µA–V(BR)CBO min.
350 V
Emitter–base breakdown voltage
–IE = 10 µA–V(BR)EBO min.
5 V
Collector cut–off current
–VCB = 250 V
–ICBO
max.
50 nA
Emitter cut-off current
–VEB = 5V
–IEBO
max.
50 nA
Output capacitance at f = 1 MHz
–VCB = 20 V
Cc
max.
5 pF
Input capacitance at f = 1 MHz
–VEB = 0.5 V
Ce
max.
80 pF
Saturation voltages
–IC = 10 mA; –IB = 1 mA
–VCEsat
max.
0.3 V
–VBEsat
max.
0.75 V
–IC = 20 mA; –IB = 2 mA
–VCEsat
max.
0.35 V
–VBEsat
max.
0.85 V
–IC = 30 mA; –IB = 3 mA
–VCEsat
max.
0.5 V
–VBEsat
max.
0.9 V
–IC = 50 mA; –IB = 5 mA
–VCEsat
max.
1.0 V
D.C. current gain
–IC = 1 mA; –VCE = 10 V
hFE
min.
20
–IC = 10 mA; –VCE = 10 V
hFE
min.
30
–IC = 30 mA; –VCE = 10 V
hFE
min.
30
max.
200
–IC = 50 mA; –VCE = 10 V
hFE
min.
20
max.
200
–IC = 100 mA; –VCE = 10 V
hFE
min.
15
Base emitter voltage
IC = 100 mA; VCE = 10 V
VBE(on)
max.
2 V
Transition frequency
IC = 10 mA; VCE = 20 V; f = 20 MHz
fT
min.
40 MHz
max.
200 MHz



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