CMMT591 datasheet(2/3 Pages) CDIL

2 / 3 page

Continental Device India Limited

Data Sheet

Page 2 of 3

RATINGS (at TA = 25°C unless otherwise specified)

Limiting values

Collector-base voltage (open emitter)

VCBO

max.

80 V

Collector-emitter voltage (open base)

VCEO

max.

60 V

Emitter-base voltage (open collector)

VEBO

max.

5 V

Collector current

max.

1 A

Peak Pulse current

ICM

max.

2 A

Base current

max.

200 mA

Total power dissipation at Tamb = 25°C

Ptot

max.

500 mW

Storage temperature

Tstg

-55 to +150 ° C

Junction temperature

max.

150 ° C

CHARACTERISTICS (at TA = 25°C unless otherwise specified)

Collector cut-off current

IE = 0; VCB = 60 V

ICBO

max.

100 nA

VBE = 0; VCE = 60 V

ICES

max.

100 nA

Emitter cut-off current

VEB = 4 V; IC = 0

IEBO

max.

100 nA

Breakdown voltages

IC = 10 mA; IB = 0

VCEO

min.

60 V

IC = 100 µA; IE = 0

VCBO

min.

80 V

IE = 100 µA; IC = 0

VEBO

min.

5 V

Base-emitter voltage

IC = 1 A; VCE = 5 V

VBE*

max.

1 V

Saturation voltage

IC = 500 mA; IB = 50 mA

VCEsat* max.

300 mV

IC = 1 A; IB = 100 mA

max.

600 mV

IC = 1 A; IB = 100 mA

VBEsat* max.

1.2 V

D.C. current gain

IC = 1 mA; VCE = 5 V

hFE

min.

100

IC = 500 mA; VCE = 5 V*

min.

100

max.

300

IC = 1 A; VCE = 5 V*

min.

IC = 2 A; VCE = 5 V*

min.

Collector capacitance at f = 1 MHz

IE = 0; VCB = 10 V

Cob

max.

10 pF

Transition frequency at f = 100 MHz

IC = 50 mA; VCE = 10 V

min.

150 MHz

* Measured under pulsed conditions: Pulse width = 300 µs, duty cycle = 2%.

CMMT591

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