PNP/NPN EPITAXIAL PLANAR SILICON TRANSISTORS

CSA709

PNP

CSC1009 NPN

TO-92

CBE

High Voltage Amplifier.

ABSOLUTE MAXIMUM RATINGS(Ta=25deg C )

DESCRIPTION

SYMBOL

CSA709

CSC1009

UNIT

Collector -Base Voltage

VCBO

160

160

V

Collector -Emitter Voltage

VCEO

150

140

V

Emitter -Base Voltage

VEBO

8.0

8.0

V

Collector Current

IC

700

700

mA

Collector Dissipation

PC

800

800

mW

Operating And Storage Junction

Tj, Tstg

-55 to +150

-55 to +150

deg C

Temperature Range

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL

TEST CONDITION

CSA709

CSC1009

UNIT

Collector -Base Voltage

VCBO

IC=100uA.IE=0

>160

>160

V

Collector -Emitter Voltage

VCEO

IC=10mA,IB=0

>150

>140

V

Emitter-Base Voltage

VEBO

IE=100uA, IC=0

>8.0

>8.0

V

Collector-Cut off Current

ICBO

VCB=60V, IE=0

-

<100

nA

VCB=100V, IE=0

<100

-

nA

Emitter-Cut off Current

IEBO

VEB=5V, IC=0

<100

<100

nA

DC Current Gain

hFE*

IC=50mA,VCE=2V

40-400

40-400

Collector Emitter Saturation Voltage

VCE(Sat)* IC=200mA,IB=20mA

<0.4

<0.7

V

Base Emitter Saturation Voltage

VBE(Sat) * IC=200mA,IB=20mA

<1.1

<1.1

V

DYNAMIC CHARACTERISTICS

Transition Frequency

ft

IC=50mA, VCE=10V

typ50

>30

MHz

Out-Put Capacitance

Cob

VCB=10V, IE=0

<10

typ8.0

pF

f=1MHz

*hFE CLASSIFICATION

CSC1009

R : 40 - 80

O : 70 -140

Y : 120-240

G: 200-400

CSA709

-

O : 70 -140

Y : 120-240

G: 200-400

*Pulse Test: PW=350us, Duty Cycle=2%

Continental Device India Limited

Data Sheet

Page 1 of 3

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company