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CSC3063 数据表(PDF) 1 Page - Continental Device India Limited

部件名 CSC3063
功能描述  NPN EPITAXIAL SILICON POWER TRANSISTOR
PDF  3 Pages
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制造商  CDIL [Continental Device India Limited]
网页  http://www.cdilsemi.com
标志 CDIL - Continental Device India Limited

CSC3063 数据表(HTML) 1 Page - Continental Device India Limited

  CSC3063 Datasheet HTML 1Page - Continental Device India Limited CSC3063 Datasheet HTML 2Page - Continental Device India Limited CSC3063 Datasheet HTML 3Page - Continental Device India Limited  
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NPN EPITAXIAL SILICON POWER TRANSISTOR
CSC3063
TO-126
Plastic Package
Video output Amplifier
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)
DESCRIPTION
SYMBOL
UNIT
Collector Base Voltage
VCBO
V
Collector Emitter Voltage
VCEO
V
Emitter Base Voltage
VEBO
V
Peak Collector Current
ICP
mA
Collector Current
IC
mA
Total Power Dissipation
PC
W
Junction Temperature
Tj
ºC
Storage Temperature
Tstg
ºC
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise )
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNIT
Collector Base Voltage
VCBO
IC=10µA, IE=0
300
V
Collector Emitter Voltage
VCEO
IC=0.1mA, IB=0
300
V
Emitter Base Voltage
VEBO
IE=10µA, IC=0
7
V
DC Current Gain
hFE
IC=5mA, VCE=50V
50
250
Collector Emitter On Voltage
VBE (on)
IC=30mA, VCE=10V
1.2
V
Collector Emitter Saturation Voltage
VCE (sat)
IC=30mA, IB=3mA
1.5
V
Dynamic Characteristics
Transition Frequency
fT
IC=20mA, VCB=30V,
70
MHz
Output Capacitance
Cob
IE=0,VCB=30V, f=0.1MHz
2.4
pF
150
- 55 to +150
Value
300
300
7
200
100
1.2
B
C
E
Continental Device India Limited
Data Sheet
Page 1 of 3
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company


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