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11DF3 数据表(PDF) 1 Page - EIC discrete Semiconductors

部件名 11DF3
功能描述  ULTRA FAST RECTIFIER DIODES
PDF  2 Pages
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制造商  EIC [EIC discrete Semiconductors]
网页  http://www.eicsemi.com
标志 EIC - EIC discrete Semiconductors

11DF3 数据表(HTML) 1 Page - EIC discrete Semiconductors

  11DF3 Datasheet HTML 1Page - EIC discrete Semiconductors 11DF3 Datasheet HTML 2Page - EIC discrete Semiconductors  
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11DF3 - 11DF4
ULTRA FAST
RECTIFIER DIODES
PRV : 300 - 400 Volts
Io : 1.0 Ampere
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Superfast recovery time
* Pb / RoHS Free
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.339 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
11DF3
11DF4
UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
300
400
V
Maximum RMS Voltage
VRMS
210
280
V
Maximum DC Blocking Voltage
VDC
300
400
V
Maximum Average Forward Current
Ta = 57
°C
IF(AV)
1.0
A
Maximum Peak Forward Surge Current,
8.3ms Single half sine wave
Superimposed on rated load (JEDEC Method)
Maximum Peak Forward Voltage at IF = 1.0 A
VF
1.25
V
Maximum DC Reverse Current at VRRM
IR
10
µA
Maximum Reverse Recovery Time ( Note 1 )
Trr
35
ns
Junction Temperature Range
TJ
- 65 to + 150
°C
Storage Temperature Range
TSTG
- 65 to + 150
°C
Note:
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
Page 1 of 2
Rev. 02 : March 25, 2005
RATING
IFSM
30
A
DO - 41
Dimensions in inches and ( millimeters )
1.00 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
0.205 (5.2)
0.166 (4.2)
1.00 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)


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