2PB710AS datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 May 31

Philips Semiconductors

Product speciﬁcation

PNP general purpose transistor

2PB710A

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = −60 V

−−10

IE = 0; VCB = −60 V; Tj = 150 °C

−−5

µA

IEBO

emitter cut-off current

IC = 0; VEB = −5V

−−10

hFE

DC current gain

IC = −150 mA; VCE = −10 V; note 1

2PB710AQ

170

2PB710AR

120

240

2PB710AS

170

340

DC current gain

IC = −500 mA; VCE = −10 V; note 1

−

VCEsat

collector-emitter saturation voltage IC = −300 mA; IB = −30 mA; note 1

−−600

VBEsat

base-emitter saturation voltage

IC = −300 mA; IB = −30 mA; note 1

−−1.5

collector capacitance

IE =ie = 0; VCB = −10 V; f = 1 MHz

−

transition frequency

IC = −50 mA; VCE = −10 V;

f = 100 MHz; note 1

2PB710AQ

100

−

MHz

2PB710AR

120

−

MHz

2PB710AS

140

−

MHz

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