2PC4617JS datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 May 04

Philips Semiconductors

Preliminary speciﬁcation

NPN general purpose transistor

2PC4617J

THERMAL CHARACTERISTICS

Note

1. Refer to SC-89 (SOT490) standard mounting conditions.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

Rth j-a

thermal resistance from junction to ambient in free air; note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =30V

−

100

IE = 0; VCB =30V; Tj = 150 °C

−

µA

IEBO

emitter cut-off current

IC = 0; VEB =4V

−

100

hFE

DC current gain

IC = 1 mA; VCE = 6 V; note 1

2PC4617JQ

120

270

2PC4617JR

180

390

2PC4617JS

270

560

VCEsat

collector-emitter saturation

voltage

IC = 50 mA; IB = 5 mA; note 1

−

200

collector capacitance

IE =ie = 0; VCB = 12 V; f = 1 MHz

−

1.5

transition frequency

IC = 2 mA; VCE = 12 V; f = 100 MHz;

note 1

100

−

MHz

2PC4617JS 数据表(PDF) 3 Page - NXP Semiconductors

2PC4617JS 数据表(HTML) 3 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8

数据表下载