FDB2572 datasheet(1/2 Pages) ISC

部件名	FDB2572

功能描述	isc N-Channel MOSFET Transistor

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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1

isc N-Channel MOSFET Transistor

FDB2572

FEATURES

·

Drain Current : ID= 29A@ TC=25℃

·

Drain Source Voltage

: VDSS= 150V(Min)

·

Static Drain-Source On-Resistance

: RDS(on) = 54mΩ(Max) @ VGS= 10V

·

100% avalanche tested

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

DESCRIPTION

·

motor drive, DC-DC converter, power switch

and solenoid drive.

·

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage

150

V

VGSS

Gate-Source Voltage

±

20

V

ID

Drain Current-Continuous;@Tc=25℃

29

A

IDM

Drain Current-Single Pulsed

116

A

PD

Total Dissipation

135

W

Tj

Operating Junction Temperature

-55~175

℃

Tstg

Storage Temperature

-55~175

℃

·

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth(ch-c)

Channel-to-case thermal resistance

1.11

℃

/W

类似零件编号 - FDB2572

制造商	部件名	数据表	功能描述
Fairchild Semiconductor	FDB2572	269Kb / 11P	N-Channel PowerTrench MOSFET 150V, 29A, 54m?

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