Philips Semiconductors

Product specification

74ALS20A

Dual 4-input NAND gate

1996 Jul 01

3

ABSOLUTE MAXIMUM RATINGS

(Operation beyond the limit set forth in this table may impair the useful life of the device.

Unless otherwise noted these limits are over the operating free-air temperature range.)

SYMBOL

PARAMETER

RATING

UNIT

Supply voltage

–0.5 to +7.0

V

Input voltage

–0.5 to +7.0

V

Input current

–30 to +5

mA

Voltage applied to output in High output state

V

Current applied to output in Low output state

16

mA

Operating free-air temperature range

0 to +70

°C

Storage temperature range

–65 to +150

°C

RECOMMENDED OPERATING CONDITIONS

SYMBOL

PARAMETER

LIMITS

UNIT

SYMBOL

PARAMETER

MIN

NOM

MAX

UNIT

Supply voltage

4.5

5.0

5.5

V

High-level input voltage

2.0

V

Low-level input voltage

0.8

V

Input clamp current

–18

mA

High-level output current

–0.4

mA

Low-level output current

8

mA

Operating free-air temperature range

0

+70

°C

DC ELECTRICAL CHARACTERISTICS

(Over recommended operating free-air temperature range unless otherwise noted.)

SYMBOL

PARAMETER

LIMITS

UNIT

SYMBOL

PARAMETER

MIN

MAX

UNIT

High-level output voltage

V

Low level output voltage

0.25

0.40

V

Low-level output voltage

CC

,

IL

,

0.35

0.50

V

Input clamp voltage

–0.73

–1.5

V

Input current at maximum input voltage

0.1

mA

High-level input current

20

µA

Low-level input current

–0.1

mA

–30

–112

mA

Supply current (total)

0.3

0.4

mA

Supply current (total)

1.0

1.5

mA

NOTES:

1. For conditions shown as MIN or MAX, use the appropriate value specified under recommended operating conditions for the applicable type.