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ADRF5023BCCZN-R7 数据表(PDF) 1 Page - Analog Devices

部件名 ADRF5023BCCZN-R7
功能描述  Silicon SPDT Switch, Nonreflective , 9 kHz to 45 GHz
PDF  12 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADRF5023BCCZN-R7 数据表(HTML) 1 Page - Analog Devices

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Data Sheet
ADRF5023
Silicon SPDT Switch, Nonreflective , 9 kHz to 45 GHz
Rev. 0
DOCUMENT FEEDBACK
TECHNICAL SUPPORT
Information furnished by Analog Devices is believed to be accurate and reliable "as is". However, no responsibility is assumed by Analog
Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to
change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
FEATURES
Ultra-wideband frequency range: 9 kHz to 45 GHz
Nonreflective design
Low insertion loss
0.9 dB typical to 18 GHz
1.6 dB typical to 40 GHz
1.7 dB typical to 45 GHz
High Isolation: 42 dB typical to 45 GHz
High input linearity:
0.1 dB power compression (P0.1dB): 31 dBm
Third-order intercept (IP3): 53 dBm
High power handling at TCASE = 85°C
30 dBm through path
24 dBm terminated path
30 dBm hot switching (RFC port)
RF settling time (0.1 dB final RF output): 3.5 μs
No low-frequency spurious signals
All off state control
Positive Control Interface: CMOS-/LVTTL-compatible
20-lead, 3.0 mm × 3.0 mm LGA package
APPLICATIONS
Test and instrumentation
Cellular Infrastructure: 5G millimeter wave
Military radios, radars, and electronic countermeasures (ECMs)
Microwave radios and very small aperture terminals (VSATs)
Industrial scanner
FUNCTIONAL BLOCK DIAGRAM
Figure 1. Functional Block Diagram
GENERAL DESCRIPTION
The ADRF5023 is a nonreflective, single-pole double-throw (SPDT)
switch manufactured in the silicon process.
The ADRF5023 operates from 9 kHz to 45 GHz with a typical
insertion loss of 1.7 dB and isolation of 42 dB. The device has a RF
input power handling capability of 30 dBm for the through path, 24
dBm for the terminated path, and 30 dBm for the hot switching at
the RF common port.
The ADRF5023 requires a positive supply of 3.3 V and a negative
supply of −3.3 V. The device employs complementary metal-oxide
semiconductor (CMOS)-/low voltage transistor to transistor logic
(LVTTL)-compatible controls.
The ADRF5023 can also operate with a single positive supply volt-
age (VDD) applied while the negative supply voltage (VSS) is tied to
ground. In this operating condition, the small signal performance is
maintained while the switching characteristics, linearity, and power
handling performance is derated. See Table 2 for more details.
The ADRF5023 comes in a 20-lead, 3.0 mm × 3.0 mm, RoHS-com-
pliant, land grid array (LGA) package and can operate from −40°C
to +105°C.


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