IPLU300N04S4-R8

Parameter

Symbol

Conditions

Unit

min.

typ.

max.

Dynamic characteristics

2)

Input capacitance

C iss

-

17650

22945 pF

Output capacitance

C oss

-

3790

4930

Reverse transfer capacitance

Crss

-

130

300

Turn-on delay time

t d(on)

-

50

-

ns

Rise time

t r

-

22

-

Turn-off delay time

t d(off)

-

68

-

Fall time

t f

-

61

-

Gate Charge Characteristics

2)

Gate to source charge

Q gs

-

90

130

nC

Gate to drain charge

Q gd

-

27

68

Gate charge total

Q g

-

221

287

Gate plateau voltage

V plateau

-

5.1

-

V

Reverse Diode

Diode continous forward current

2)

I S

-

-

300

A

Diode pulse current

2)

I S,pulse

-

-

1200

Diode forward voltage

V SD

V GS=0 V, I F=100 A,

T j=25 °C

-

0.9

1.3

V

Reverse recovery time

2)

t rr

-

85

-

ns

Reverse recovery charge

2)

Q rr

-

132

-

nC

Values

V GS=0 V, V DS=25 V,

f =1 MHz

V DD=20 V, V GS=10 V,

I D=300 A, R G=3.5 W

V DD=32 V, I D=300 A,

V GS=0 to 10 V

2) Defined by design. Not subject to production test.

3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

1) Current is limited by bondwire; with an R

thJC = 0.35 K/W the chip is able to carry 697A at 25°C.

V R=20 V, I F=50A,

di F/dt =100 A/µs

T C=25 °C

Rev. 1.1

page 3

2015-10-06