VLMS20.., VLMK20.., VLMO20.., VLMY20.., VLMP20..

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Vishay Semiconductors

Rev. 2.4, 14-Sep-2022

2

Document Number: 81339

For technical questions, contact: LED@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

(1) Driving the LED in reverse direction is suitable for a short term application

Note

(1) In one packing unit IVmax./IVmin.

≤ 1.6

Note

(1) In one packing unit IVmax./IVmin.

≤ 1.6

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

VLMS20.., VLMK20.., VLMO20.., VLMY20.., VLMP20..

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage (1)

VR

5V

DC forward current

Tamb

≤ 100 °C

IF

15

mA

Surge forward current

tp

≤ 10 μs

IFSM

0.1

A

Power dissipation

PV

40

mW

Junction temperature

Tj

+125

°C

Operating temperature range

Tamb

-40 to +100

°C

Storage temperature range

Tstg

-40 to +100

°C

Thermal resistance junction/ambient

Mounted on PC board (pad size > 5 mm2)RthJA

580

K/W

OPTICAL AND ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

VLMS20.., SUPER RED

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

Luminous intensity (1)

IF = 2 mA

VLMS2000

lV

2.24

4.5

-

mcd

VLMS20H2K1

lV

3.55

-

9

mcd

VLMS20H2L1

lV

3.55

-

14

mcd

VLMS20J2L1

lV

5.6

-

14

mcd

Dominant wavelength

IF = 2 mA

λd

-

630

-

nm

Peak wavelength

IF = 2 mA

λp

-

643

-

nm

Angle of half intensity

IF = 2 mA

ϕ

-± 60

-

°

Forward voltage

IF = 2 mA

VF

-1.8

2.2

V

Reverse voltage

IR = 10 μA

VR

5-

-

V

Junction capacitance

VR = 0 V, f = 1 MHz

Cj

-15-

pF

OPTICAL AND ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

VLMK20K1L2, AMBER

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

Luminous intensity (1)

IF = 2 mA

VLMK20K1L2

lV

7.1

-

18

mcd

Dominant wavelength

IF = 2 mA

λd

612

622

624

nm

Peak wavelength

IF = 2 mA

λp

-

615

-

nm

Angle of half intensity

IF = 2 mA

ϕ

-± 60

-

°

Forward voltage

IF = 2 mA

VF

-1.8

2.2

V

Reverse voltage

IR = 10 μA

VR

5-

-

V

Junction capacitance

VR = 0 V, f = 1 MHz

Cj

-15-

pF