VLMO21.., VLMY21..

www.vishay.com

Vishay Semiconductors

Rev. 1.9, 19-Apr-2022

2

Document Number: 81233

For technical questions, contact: LED@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

(1) Driving the LED in reverse direction is suitable for a short term application

Note

(1) In one packing unit IVmax./IVmin.

≤ 1.6

Note

(1) In one packing unit IVmax./IVmin.

≤ 1.6

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

VLMO21.., VLMY21..

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage (1)

VR

6V

DC forward current

Tamb

≤ 74 °C

IF

20

mA

Surge forward current

tp

≤ 10 μs

IFSM

0.34

A

Power dissipation

PV

56

mW

Junction temperature

Tj

+100

°C

Operating temperature range

Tamb

-40 to +100

°C

Storage temperature range

Tstg

-40 to +100

°C

Soldering temperature

t

≤ 5 s

Tsd

260

°C

Thermal resistance junction to ambient

Mounted on PC board (pad size > 5 mm2)RthJA

480

K/W

OPTICAL AND ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

VLMO21.., SOFT ORANGE

PARAMETER

TEST CONDITION

PARTS

SYMBOL

MIN.

TYP.

MAX.

UNIT

Luminous intensity (1)

IF = 10 mA

VLMO2100

IV

3.55

7.0

-

mcd

Dominant wavelength

IF = 10 mA

λd

598

605

611

nm

Peak wavelength

IF = 10 mA

λp

-

605

-

nm

Angle of half intensity

IF = 10 mA

j

-± 60

-

°

Forward voltage

IF = 20 mA

VF

-2.1

3

V

Reverse voltage

IR = 10 μA

VR

615

-

V

Junction capacitance

VR = 0 V, f = 1 MHz

Cj

-15-

pF

OPTICAL AND ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

VLMY21.., YELLOW

PARAMETER

TEST CONDITION

PARTS

SYMBOL

MIN.

TYP.

MAX.

UNIT

Luminous intensity (1)

IF = 10 mA

VLMY2100

IV

3.55

8.5

-

mcd

Dominant wavelength

IF = 10 mA

λd

581

588

594

nm

Peak wavelength

IF = 10 mA

λp

-

585

-

nm

Angle of half intensity

IF = 10 mA

ϕ

-± 60

-

°

Forward voltage

IF = 20 mA

VF

-2.2

3

V

Reverse voltage

IR = 10 μA

VR

615

-

V

Junction capacitance

VR = 0 V, f = 1 MHz

Cj

-15-

pF