2SC5960

No.7610-2/4

6

10

8

4

2

0

02

6

48

13

7

59

10

IC -- VCE

IT05057

1000mA

IB=0

300mA

200mA

100mA

400mA

500mA

600mA

5

9

7

3

1

700mA

800mA

900mA

Collector-to-Emitter Voltage, VCE -- V

8

6

7

4

5

3

2

1

0

0

0.2

0.4

0.6

0.8

1.0

1.4

1.2

IC -- VBE(on)

VCE=5V

Collector Current, IC -- A

10

7

5

100

7

5

3

2

2

3

57

2

3

57

2

3

57

0.1

0.01

1.0

10

hFE -- IC

IT05151

VCE=5V

Ta=120°C

25°C

--40°C

Collector Current, IC -- A

0.1

0.01

1.0

5

3

2

7

5

3

2

7

3

25 7

3

25 7

3

25 7

1.0

0.01

0.1

10

VCE(sat) -- IC

IT05152

IC / IB=5

Ta= --40

°C

120

°C

25

°C

Continued from preceding page.

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

hFE1VCE=5V, IC=0.8A

20*

50*

DC Current Gain

hFE2VCE=5V, IC=4A

10

hFE3VCE=5V, IC=1mA

10

Collector-to-Emitter Saturation Voltage

VCE(sat)

IC=4A, IB=0.8A

0.8

V

Base-to-Emitter Saturation Voltage

VBE(sat)

IC=4A, IB=0.8A

1.5

V

Gain-Bandwidth Product

fT

VCE=10V, IC=0.8A

15

MHz

Output Capacitance

Cob

VCB=10V, f=1MHz

50

pF

Collector-to-Base Breakdown Voltage

V(BR)CBO

IC=1mA, IE=0

500

V

Collector-to-Emitter Breakdown Voltage

V(BR)CEO

IC=5mA, RBE=∞

400

V

Emitter-to-Base Breakdown Voltage

V(BR)EBO

IE=1mA, IC=0

7

V

Turn-On Time

ton

IC=5A, IB1=1A, IB2=--2A, RL=40Ω, VCC=200V

0.5

µs

Storage Time

tstg

IC=5A, IB1=1A, IB2=--2A, RL=40Ω, VCC=200V

2.5

µs

Fall Time

tf

IC=5A, IB1=1A, IB2=--2A, RL=40Ω, VCC=200V

0.3

µs

* : The hFE1 of the 2SC5960 is classified as follows.

Rank

M

N

hFE

20 to 40

30 to 50

Switching Time Test Circuit

D.C.

≤1%

VR

RB

VCC=200V

VBE= --5V

+

+

50

Ω

INPUT

OUTPUT

RL

100

µF

470

µF

PW=20

µs

IB1

IB2