TLHR640., TLHY640., TLHG640.

www.vishay.com

Vishay Semiconductors

Rev. 2.3, 27-Sep-2021

2

Document Number: 83219

For technical questions, contact: LED@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

(1) In one packing unit IVmin./IVmax.

≤ 0.5

Notes

(1) In one packing unit IVmin./IVmax.

≤ 0.5

(2) Not for new designs

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

TLHR640., TLHY640., TLHG640.

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage

VR

6V

DC forward current

Tamb

≤ 65 °C

IF

30

mA

Surge forward current

tp

≤ 10 μs

IFSM

1A

Power dissipation

Tamb

≤ 65 °C

PV

100

mW

Junction temperature

Tj

100

°C

Operating temperature range

Tamb

-40 to +100

°C

Storage temperature range

Tstg

-55 to +100

°C

Soldering temperature

t

≤ 5 s, 2 mm from body

Tsd

260

°C

Thermal resistance junction to ambient

RthJA

350

K/W

OPTICAL AND ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

TLHR640., RED

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

Luminous intensity (1)

IF = 10 mA

TLHR6400

IV

1.6

10

-

mcd

TLHR6401

IV

412

-

mcd

TLHR6405

IV

6.3

14

-

mcd

Dominant wavelength

IF = 10 mA

λd

612

-

630

nm

Peak wavelength

IF = 10 mA

λp

-

635

-

nm

Angle of half intensity

IF = 10 mA

ϕ

-± 30

-

°

Forward voltage

IF = 20 mA

VF

-2

3

V

Reverse voltage

IR = 10 μA

VR

615

-

V

Junction capacitance

VR = 0 V, f = 1 MHz

Cj

-50

-

pF

OPTICAL AND ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

TLHY640., YELLOW

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

Luminous intensity (1)

IF = 10 mA

TLHY6400

IV

1.6

10

-

mcd

TLHY6401 (2)

IV

412

-

mcd

TLHY6405

IV

6.3

14

-

mcd

Dominant wavelength

IF = 10 mA

λd

581

-

594

nm

Peak wavelength

IF = 10 mA

λp

-

585

-

nm

Angle of half intensity

IF = 10 mA

ϕ

-± 30

-

°

Forward voltage

IF = 20 mA

VF

-2.4

3

V

Reverse voltage

IR = 10 μA

VR

615

-

V

Junction capacitance

VR = 0 V, f = 1 MHz

Cj

-50

-

pF