VLMK23.., VLMF23.., VLME23..

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Vishay Semiconductors

Rev. 2.2, 21-Jul-2022

2

Document Number: 81681

For technical questions, contact: LED@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

(1)

Driving the LED in reverse direction is suitable for a short term application

Note

(1) In one packing unit IVmax./IVmin.

≤ 1.6

Note

(1) In one packing unit IVmax./IVmin.

≤ 1.6

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

VLMK23.., VLMF23.., VLME23..

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage (1)

VR

5V

DC Forward current

Tamb

≤ 80 °C

IF

30

mA

Surge forward current

tp

≤ 10 μs

IFSM

0.1

A

Power dissipation

PV

80

mW

Junction temperature

Tj

+125

°C

Operating temperature range

Tamb

-40 to +100

°C

Storage temperature range

Tstg

-40 to +100

°C

Thermal resistance junction to ambient

Mounted on PC board (pad size > 5 mm2)RthJA

580

K/W

OPTICAL AND ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

VLMK23.., RED

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

Luminous intensity (1)

IF = 20 mA

VLMK23P2R1

IV

56

120

140

mcd

VLMK23P2S1

IV

56

125

224

mcd

Dominant wavelength

IF = 20 mA

λd

-

630

-

nm

Peak wavelength

IF = 20 mA

λp

-

643

-

nm

Angle of half intensity

IF = 20 mA

ϕ

-± 60

-

°

Forward voltage

IF = 20 mA

VF

-1.9

2.6

V

Reverse voltage

IR = 10 μA

VR

5-

-

V

Junction capacitance

VR = 0 V, f = 1 MHz

Cj

-15

-

pF

OPTICAL AND ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

VLMF23.., SOFT ORANGE

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

Luminous intensity (1)

IF = 20 mA

VLMF23Q2S1

IV

90

180

224

mcd

Dominant wavelength

IF = 20 mA

λd

598

605

611

nm

Peak wavelength

IF = 20 mA

λp

-

610

-

nm

Angle of half intensity

IF = 20 mA

ϕ

-± 60

-

°

Forward voltage

IF = 20 mA

VF

-2

2.6

V

Reverse voltage

IR = 10 μA

VR

5-

-

V

Junction capacitance

VR = 0 V, f = 1 MHz

Cj

-15

-

pF