MCP960X datasheet(8/57 Pages) MICROCHIP

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DS20005426G-page 8

MCP960X/L0X/RL0X

INPUT/OUTPUT PIN DC CHARACTERISTICS

Electrical Specifications: Unless otherwise indicated, VDD = 2.7V to 5.5V, GND = Ground, TA = -40°C to +125°C

(where: TA =TC, defined as Device Ambient Temperature).

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Serial Input/Output and I2C Address Input (ADDR)

Input (SCL, SDA, ADDR)

High-Level Voltage

VIH

0.7 × VDD

——

Low-Level Voltage

VIL

——

0.3 × VDD

Input Current

ILEAK

——

±2

µA

Hysteresis

VHYST

—

0.05 × VDD

—V

VDD > 2V

Spike Suppression

TSP

—50

—

Output (SDA)

Low-Level Voltage

VOL

——0.4

IOL= 3 mA

High-Level Current (leakage)

IOH

——

µA

VOH = VDD

Low-Level Current

IOL

6—

—

VOL = 0.6V

Capacitance

CIN

—5

—

I2C Address Selection Levels (Note 1)

Command Byte [1100 000x]VADDR

GND

—

Address = 0

Command Byte [1100 001x]VADDR_L

(Note 2)

VADDR_TYP

(Note 2)

VADDR_H

(Note 2)

Address = 1

Command Byte [1100 010x]Address = 2

Command Byte [1100 011x]Address = 3

Command Byte [1100 100x]Address = 4

Command Byte [1100 101x]Address = 5

Command Byte [1100 110x]Address = 6

Command Byte [1100 111x]—

—

VDD

Address = 7

Note 1

The ADDR pin can be tied to VDD or VSS. For additional addresses, a resistive divider network can be

used to set voltage levels that are rationed to VDD. The device supports up to eight levels (see

Section 6.3.1 “I2C Addressing” for recommended resistor values).

VADDR_TYP =Address * VDD/8 + VDD/16,

VADDR_L =VADDR_TYP –VDD/32 and

VADDR_H =VADDR_TYP +VDD/32 (where: Address = 1, 2, 3, 4, 5, 6).

TEMPERATURE CHARACTERISTICS

Electrical Specifications: Unless otherwise indicated, VDD = 2.7V to 5.5V, GND = Ground.

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Temperature Ranges

Specified Temperature Range

-40

—

+125

°C

Note 1

Operating Temperature Range

-40

—

+125

°C

Storage Temperature Range

-65

—

+150

°C

Thermal Package Resistances

Thermal Resistance, MQFN

JA

—

38.8

—

°C/W

Note 1

Operation in this range must not cause TJ to exceed the Maximum Junction Temperature (+150°C).

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