VLMH310., VLMO310., VLMY310., VLMG310.

www.vishay.com

Vishay Semiconductors

Rev. 2.5, 16-Feb-2022

2

Document Number: 84789

For technical questions, contact: LED@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

(1) In one packing unit IVmax./IVmin.

≤ 1.6

Note

(1) In one packing unit IVmax./IVmin.

≤ 1.6

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

VLMG310., VLMH310., VLMO310., VLMY310.

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage

VR

6V

DC forward current

Tamb

≤ 74 °C

IF

20

mA

Surge forward current

tp

≤ 10 μs

IFSM

0.34

A

Power dissipation

PV

56

mW

Junction temperature

Tj

100

°C

Operating temperature range

Tamb

-40 to +100

°C

Storage temperature range

Tstg

-40 to +100

°C

Soldering temperature

t

≤ 5 s

Tsd

260

°C

Thermal resistance junction to ambient Mounted on PC board (pad size > 16 mm2)RthJA

400

K/W

OPTICAL AND ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

VLMH310., AMBER

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

Luminous intensity (1)

IF = 10 mA

VLMH3100

IV

2.8

12

-

mcd

VLMH3102

IV

7.1

12

18

mcd

Dominant wavelength

IF = 10 mA

λd

612

619

625

nm

Peak wavelength

IF = 10 mA

λp

-

635

-

nm

Angle of half intensity

IF = 10 mA

ϕ

-± 60

-

°

Forward voltage

IF = 20 mA

VF

-2

2.8

V

Reverse current

VR = 6 V

IR

-

-

10

μA

Junction capacitance

VR = 0 V, f = 1 MHz

Cj

-15-

pF

OPTICAL AND ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

VLMO310., SOFT ORANGE

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

Luminous intensity (1)

IF = 10 mA

VLMO3100

IV

2.8

8

-

mcd

Dominant wavelength

IF = 10 mA

λd

598

605

611

nm

Peak wavelength

IF = 10 mA

λp

-

605

-

nm

Angle of half intensity

IF = 10 mA

ϕ

-± 60

-

°

Forward voltage

IF = 20 mA

VF

-2

2.8

V

Reverse current

VR = 6 V

IR

-

-

10

μA

Junction capacitance

VR = 0 V, f = 1 MHz

Cj

-15-

pF