IXGP 30N60C2

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

I

C

= 24 A; V

18

28

S

Pulse test, t

≤ 300 µs, duty cycle ≤ 2 %

C

ies

1430

pF

C

oes

V

110

pF

C

res

40

pF

Q

g

70

nC

Q

ge

I

10

nC

Q

gc

23

nC

t

d(on)

13

ns

t

ri

15

ns

t

d(off)

70

140

ns

t

fi

60

ns

E

off

0.19

0.30 mJ

t

d(on)

13

ns

t

ri

17

ns

E

on

0.22

mJ

t

d(off)

120

ns

t

fi

130

ns

E

off

0.59

mJ

R

thJC

0.65 K/W

R

thCH

0.25

K/W

Inductive load, T

°°°°C

I

V

Inductive load, T

°°°°C

I

V

Pins: 1 - Gate

2 - Drain

3 - Source

4 - Drain

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065B1

6,683,344

6,727,585

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123B1

6,534,343

6,710,405B2

6,759,692

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6771478B2

TO-220 Outline