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ISC16DP15LM 数据表(PDF) 4 Page - Infineon Technologies AG

部件名 ISC16DP15LM
功能描述  OptiMOSTM Power-Transistor, -150 V
PDF  11 Pages
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制造商  INFINEON [Infineon Technologies AG]
网页  http://www.infineon.com
标志 INFINEON - Infineon Technologies AG

ISC16DP15LM 数据表(HTML) 4 Page - Infineon Technologies AG

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4
OptiMOSTMPower-Transistor,-150V
ISC16DP15LM
Rev.2.0,2022-10-07
Final Data Sheet
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Drain-source breakdown voltage
V(BR)DSS
-150
-
-
V
VGS=0V,ID=-250µA
Gate threshold voltage
VGS(th)
-1
-1.6
-2
V
VDS=VGS,ID=-2304µA
Zero gate voltage drain current
IDSS
-
-
-0.1
-10
-1
-100
µA
VDS=-150V,VGS=0V,Tj=25°C
VDS=-150V,VGS=0V,Tj=125°C
Gate-source leakage current
IGSS
-
-10
-100
nA
VGS=-20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
-
134
136
160
160
m
Ω
VGS=-10V,ID=-10A
VGS=-4.5V,ID=-8A
Gate resistance
RG
-
5
-
Ω
-
Transconductance
gfs
-
31
-
S
|VDS|
≥2|ID|RDS(on)max,ID=-10A
Table5Dynamiccharacteristics
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Input capacitance
1)
Ciss
-
3500
4600
pF
VGS=0V,VDS=-75V,f=1MHz
Output capacitance
1)
Coss
-
140
180
pF
VGS=0V,VDS=-75V,f=1MHz
Reverse transfer capacitance
1)
Crss
-
30
52
pF
VGS=0V,VDS=-75V,f=1MHz
Turn-on delay time
td(on)
-
67.76
-
ns
VDD=-75V,VGS=-4.5V,ID=-10A,
RG,ext=1.6
Ω
Rise time
tr
-
18.24
-
ns
VDD=-75V,VGS=-4.5V,ID=-10A,
RG,ext=1.6
Ω
Turn-off delay time
td(off)
-
73.92
-
ns
VDD=-75V,VGS=-4.5V,ID=-10A,
RG,ext=1.6
Ω
Fall time
tf
-
32.06
-
ns
VDD=-75V,VGS=-4.5V,ID=-10A,
RG,ext=1.6
Ω
Table6Gatechargecharacteristics2)
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Gate to source charge
Qgs
-
-9.4
-
nC
VDD=-75V,ID=-10A,VGS=0to-4.5V
Gate charge at threshold
Qg(th)
-
-5.6
-
nC
VDD=-75V,ID=-10A,VGS=0to-4.5V
Gate to drain charge
1)
Qgd
-
-21
-32
nC
VDD=-75V,ID=-10A,VGS=0to-4.5V
Switching charge
Qsw
-
-25
-
nC
VDD=-75V,ID=-10A,VGS=0to-4.5V
Gate charge total
1)
Qg
-
-46
-58
nC
VDD=-75V,ID=-10A,VGS=0to-4.5V
Gate plateau voltage
Vplateau
-
-2.7
-
V
VDD=-75V,ID=-10A,VGS=0to-4.5V
Gate charge total
1)
Qg
-
-94
-125
nC
VDD=-75V,ID=-10A,VGS=0to-10V
Output charge
2)
Qoss
-
-26
-35
nC
VDS=-75V,VGS=0V
1) Defined by design. Not subject to production test.
2) See
″Gate charge waveforms″ for parameter definition



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