STTH6004W datasheet(2/6 Pages) STMICROELECTRONICS

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STTH6004W

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Table 4: Thermal Resistance

Table 5: Static electrical characteristics

Pulse test:

* tp = 5 ms, δ < 2%

** tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation: P = 0.8 x IF(AV) + 0.0033 IF

(RMS)

Table 6: Dynamic characteristics

Symbol

Parameter

Value (max).

Unit

Rth(j-c)

Junction to case

0.70

°C/W

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

IR *

Reverse leakage current Tj = 25 °C

VR = VRRM

µA

Tj = 150 °C

100

1000

VF **

Forward voltage drop

Tj = 25 °C

IF = 60 A

1.2

Tj = 150 °C

0.83

1.0

Symbol

Parameter

Test conditions

Min

Typ Max Unit

trr

Reverse recovery

time

Tj = 25 °C

IF = 1 A dIF/dt = 50 A/µs VR =30 V

IF = 1 A dIF/dt = 200 A/µs VR =30 V

IRM

Reverse recovery

current

Tj = 125 °C IF = 60 A

VR = 200 V

dIF/dt = 100 A/µs

Sfactor Softness factor

Tj = 125 °C IF = 60 A

VR = 200 V

dIF/dt = 100 A/µs

0.4

tfr

Forward recovery

time

Tj = 25 °C

IF = 60 A

dIF/dt = 200 A/µs

VFR = 1.1 x VFmax

600

VFP

Forward recovery

voltage

Tj = 25 °C

IF = 60 A

dIF/dt = 200 A/µs

VFR = 1.1 x VFmax

3.2

Figure 1: Conduction losses versus average

forward current

Figure 2: Forward voltage drop versus forward

current

20304050

607080

P(W)

d=0.05

d=0.1

d=0.2

d=0.5

d=1

F(AV)

(A)

100

120

140

160

180

200

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

(A)

J=150°C

(Maximum values)

J=150°C

(Typical values)

J=25°C

(Maximum values)

(V)

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