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ZXTP2012A 数据表(PDF) 2 Page - Zetex Semiconductors |
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ZXTP2012A 数据表(HTML) 2 Page - Zetex Semiconductors |
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2 / 6 page ![]() ZXTP2012A SEMICO NDUC TORS ISSUE 2 - NOVEMBER 2005 2 PARAMETER SYMBOL VALUE UNIT Junction to ambient (a) R JA 125 °C/W Junction to ambient (b) R JA 175 °C/W NOTES (a) For a device through hole mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Collector lead length to solder point 4mm. (b) For a device mounted in a socket in still air conditions. Collector lead length 10mm. THERMAL RESISTANCE PARAMETER SYMBOL LIMIT UNIT Collector-base voltage BVCBO -100 V Collector-emitter voltage BVCEO -60 V Emitter-base voltage BVEBO -7 V Continuous collector current (a) IC -3.5 A Peak pulse current ICM -15 A Practical power dissipation at TA =25°C (a) Linear derating factor PD 1.0 8 W mW/°C Power dissipation at TA =25°C (b) Linear derating factor PD 0.71 5.7 W mW/°C Operating and storage temperature range Tj,Tstg -55 to 150 °C ABSOLUTE MAXIMUM RATINGS |
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