IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

Q

g(on)

158

nC

Q

gs

V

GS

= 10 V, V

42

nC

Q

gd

92

nC

t

d(on)

20

ns

t

r

V

GS

= 10 V, V

55

ns

t

d(off)

I

60

ns

t

f

10

ns

R

thJC

0.5

K/W

R

thCH

0.30

K/W

Reverse Correction

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

V

SD

I

0.8

1.2

V

Note 3

Note: 1. MOSFET chip capability

2. Intrinsic diode capability

3. Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

IXKC 40N60C

Note: All terminals are solder plated.

1 - Gate

2 - Drain

3 - Source

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