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TSDP341.. 数据表(PDF) 2 Page - Vishay Siliconix |
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TSDP341.. 数据表(HTML) 2 Page - Vishay Siliconix |
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2 / 7 page ![]() TSDP341.., TSDP343.. www.vishay.com Vishay Semiconductors Rev. 1.6, 02-Aug-2021 2 Document Number: 82667 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note • Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect the device reliability PARTS TABLE AGC LOW NOISE ENVIRONMENTS (AGC1) NOISY ENVIRONMENTS (AGC3) Carrier frequency 38.4 kHz TSDP34138 TSDP34338 57.6 kHz TSDP34156 TSDP34356 Package Mold Pinning 1 = OUT, 2 = GND, 3 = VS 1 = OUT, 2 = GND, 3 = VS Dimensions (mm) 6.0 W x 6.95 H x 5.6 D Mounting Leaded Application Data transmission Special options • Narrow optical filter: www.vishay.com/doc?81590 • Wide optical filter: www.vishay.com/doc?82726 • Low voltage option: www.vishay.com/doc?82382 ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Supply voltage VS -0.3 to +6 V Supply current IS 3mA Output voltage VO -0.3 to (VS + 0.3) V Output current IO 5mA Junction temperature Tj 100 °C Storage temperature range Tstg -25 to +85 °C Operating temperature range Tamb -25 to +85 °C Power consumption Tamb ≤ 85 °C Ptot 10 mW Soldering temperature t ≤ 10 s, 1 mm from case Tsd 260 °C ELECTRICAL AND OPTICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Supply current Ev = 0, VS = 3.3 V ISD 0.27 0.35 0.45 mA Ev = 40 klx, sunlight ISH -0.45- mA Supply voltage VS 2.5 - 5.5 V Transmission distance Ev = 0, test signal see Fig. 1, IR diode TSAL6200, IF = 50 mA d- 21 - m Output voltage low IOSL = 0.5 mA, Ee = 0.7 mW/m2, test signal see Fig. 1 VOSL - - 100 mV Minimum irradiance Pulse width tolerance: tpi - 1/f0 < tpo < tpi + 4/f0, test signal see Fig. 1 Ee min. - 0.15 0.30 mW/m2 Maximum irradiance tpi - 1/f0 < tpo < tpi + 4/f0, test signal see Fig. 1 Ee max. 30 - - W/m2 Maximum pulse width Ee min. > 10 mW/m2, tpi = 8/f0 tpo max. - - 11.5/f0 s Directivity Angle of half transmission distance ϕ1/2 -± 45 - deg |
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