TSOP111.., TSOP113.., TSOP115..

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Vishay Semiconductors

Rev. 1.6, 30-Jul-2021

2

Document Number: 82823

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

• 30 kHz and 33 kHz only available on written request

Note

• Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only

and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification

is not implied. Exposure to absolute maximum rating conditions for extended periods may affect the device reliability

PARTS TABLE

AGC

BASIC NOISE SUPPRESSION

(AGC1)

ENHANCED NOISE

SUPPRESSION (AGC3)

MAXIMIZED NOISE

SUPPRESSION (AGC5)

Carrier

frequency

30 kHz

TSOP11130

TSOP11330

TSOP11530

33 kHz

TSOP11133

TSOP11333

TSOP11533

36 kHz

TSOP11136

TSOP11336 (1)

TSOP11536

38 kHz

TSOP11138

TSOP11338 (2)(4)

TSOP11538

40 kHz

TSOP11140

TSOP11340

TSOP11540

56 kHz

TSOP11156

TSOP11356 (3)

TSOP11556

Package

Cast

Pinning

1 = GND, 2 = VS, 3 = OUT

Dimensions (mm)

10.0 W x 12.5 H x 5.8 D

Mounting

Leaded

Application

Remote control

Best choice for

(1) RCMM (2) RECS-80 Code (3) r-map (4) XMP-1, XMP-2

ABSOLUTE MAXIMUM RATINGS

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Supply voltage (pin 2)

VS

-0.3 to +6

V

Supply current (pin 2)

IS

3mA

Output voltage (pin 3)

VO

-0.3 to (VS + 0.3)

V

Output current (pin 3)

IO

5mA

Junction temperature

Tj

100

°C

Storage temperature range

Tstg

-25 to +85

°C

Operating temperature range

Tamb

-25 to +85

°C

Power consumption

Tamb

≤ 85 °C

Ptot

10

mW

Soldering temperature

t

≤ 10 s, 1 mm from case

Tsd

260

°C

ELECTRICAL AND OPTICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Supply current (pin 2)

Ev = 0, VS = 3.3 V

ISD

0.55

0.7

0.9

mA

Ev = 40 klx, sunlight

ISH

-0.8

-

mA

Supply voltage

VS

2.5

-

5.5

V

Transmission distance

Ev = 0, test signal see Fig. 1,

IR diode TSAL6200, IF = 50 mA

d-

24

-

m

Output voltage low (pin 3)

IOSL = 0.5 mA, Ee = 0.7 mW/m2,

test signal see Fig. 1

VOSL

-

-

100

mV

Minimum irradiance

Pulse width tolerance:

tpi - 3.0/fo < tpo < tpi + 3.5/fo, test

signal see Fig. 1

Ee min.

-

0.12

0.25

mW/m2

Maximum irradiance

tpi - 3.0/fo < tpo < tpi + 3.5/fo, test

signal see Fig. 1

Ee max.

30

-

-

W/m2

Maximum long burst irradiance

(AGC3, AGC5)

tpi - 3.0/fo < tpo < tpi + 3.5/fo, test

signal see Fig. 1, dark ambient,

burst length > 30 cycles

Ee max.

0.5

-

-

W/m2

Directivity

Angle of half transmission

distance

ϕ1/2

-± 45

-

°