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VSOP383.. 数据表(PDF) 2 Page - Vishay Siliconix |
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VSOP383.. 数据表(HTML) 2 Page - Vishay Siliconix |
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2 / 9 page ![]() VSOP383.. www.vishay.com Vishay Semiconductors Rev. 1.4, 30-Jul-2021 2 Document Number: 82748 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note • Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect the device reliability. PARTS TABLE AGC NOISY ENVIRONMENTS AND SHORT BURSTS (AGC3) Carrier frequency 36 kHz VSOP38336 (1) 38 kHz VSOP38338 (2)(3)(4)(5) Package VSOP Pinning 1, 4, 5 = N.C., 2 = VS, 3 = OUT, 6, 8 = GND, 7 = IN Dimensions (mm) 2.0 W x 2.0 H x 0.76 D Mounting SMD Application Remote control Best remote control code (1) MCIR (2) Mitsubishi (3) RECS-80 Code (4) r-map (5) XMP-1, XMP-2 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Supply voltage Pin 2 VS -0.3 to +6 V Supply current Pin 2 IS 3mA Output voltage Pin 3 VO -0.3 to (VS + 0.3) V Output sink current Pin 3 IO 5mA Power dissipation Tamb ≤ 85 °C Ptot 10 mW Operating temperature range Tamb -25 to +85 °C Storage temperature range Tstg -25 to +85 °C ESD stress, HBM Pin 2, pin 3, MIL-STD-883C VESD 2000 V Pin 7, MIL-STD-883C VESD 500 V ESD stress, MM Pin 2, pin 3, MIL-STD-883C VESD 200 V Pin 7, MIL-STD-883C VESD 100 V ELECTRICAL CHARACTERISTICS (Tamb = -30 °C to +85 °C) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Supply voltage VS 2.5 - 5.5 V Supply current (pin 2) IIN = 0, VS = 5 V IS 0.27 0.35 0.45 mA Output voltage low (pin 3) IOL = 2 mA VOL - - 100 mV Output voltage high (pin 3) IOL = 0 VOH VS - 0.25 - - V Internal pull up resistor (pin 2, pin 3) RPU -33- k Ω Max. input DC current VIN > 0 IIN-DCmax. 400 - - μA Min. signal detection current IIN-DC = 0, fC = fBPF IIN-min. - 400 800 pA IIN-DC = 100 μA, fC = fBPF IIN-min. - 5 10 nA Output pulse width IIN-DC = 0, fC = fBPF, IIN = 0.8 nA to 50 μA, testsignal see fig. 1, BER ≤ 2% tpo tpi - 6/f0 tpi tpi + 6/f0 μs Accuracy of bandpass center frequency Tamb = + 25 °C fBPF f0 - 4 % f0 f0 + 4 % kHz Bandwidth of bandpassfilter - 3 dB, f0 = 38 kHz B - 3.8 - kHz |
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