BU808DF

X

HIGH VOLTAGE FAST-SWITCHING

NPN POWER DARLINGTON TRANSISTOR

s

STMicroelectronics PREFERRED

SALESTYPE

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NPN MONOLITHIC DARLINGTON WITH

INTEGRATED FREE-WHEELING DIODE

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HIGH VOLTAGE CAPABILITY (> 1400 V)

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HIGH DC CURRENT GAIN (TYP. 150)

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FULLY INSULATED PACKAGE (U.L.

COMPLIANT) FOR EASY MOUNTING

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LOW BASE-DRIVE REQUIREMENTS

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DEDICATED APPLICATION NOTE AN1184

APPLICATIONS

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COST EFFECTIVE SOLUTION FOR

HORIZONTAL DEFLECTION IN LOW END

TV UP TO 21 INCHES.

DESCRIPTION

The BU808DFX is a NPN transistor in monolithic

Darlington configuration. It is manufactured using

Multiepitaxial Mesa technology for cost-effective

high performance.

INTERNAL SCHEMATIC DIAGRAM

April 2007

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage (IE = 0)

1400

V

VCEO

Collector-Emitter Voltage (IB = 0)

700

V

VEBO

Emitter-Base Voltage (IC = 0)

5

V

IC

Collector Current

8

A

ICM

Collector Peak Current (tp < 5 ms)

10

A

IB

Base Current

3

A

IBM

Base Peak Current (tp < 5 ms)

6

A

Ptot

Total Dissipation at Tc = 25 oC62

W

Visol

Insulation Withstand Voltage (RMS) from All

Three Leads to Exernal Heatsink

2500

V

Tstg

Storage Temperature

-65 to 150

oC

Tj

Max. Operating Junction Temperature

150

oC

ISOWATT218FX

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