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ZXMP7A17K 数据表(PDF) 2 Page - Zetex Semiconductors

部件名 ZXMP7A17K
功能描述  70V P-channel enhancement mode MOSFET
PDF  8 Pages
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制造商  ZETEX [Zetex Semiconductors]
网页  http://www.diodes.com/
标志 ZETEX - Zetex Semiconductors

ZXMP7A17K 数据表(HTML) 2 Page - Zetex Semiconductors

  ZXMP7A17K Datasheet HTML 1Page - Zetex Semiconductors ZXMP7A17K Datasheet HTML 2Page - Zetex Semiconductors ZXMP7A17K Datasheet HTML 3Page - Zetex Semiconductors ZXMP7A17K Datasheet HTML 4Page - Zetex Semiconductors ZXMP7A17K Datasheet HTML 5Page - Zetex Semiconductors ZXMP7A17K Datasheet HTML 6Page - Zetex Semiconductors ZXMP7A17K Datasheet HTML 7Page - Zetex Semiconductors ZXMP7A17K Datasheet HTML 8Page - Zetex Semiconductors  
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ZXMP7A17K
Issue 1 - March 2006
2
www.zetex.com
© Zetex Semiconductors plc 2006
Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in
still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t
10 sec.
(c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300 s - pulse width limited by maximum
junction temperature.
(d) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
Parameter
Symbol
Limit
Unit
Drain-source voltage
VDSS
-70
V
Gate-source voltage
VGS
20
V
Continuous drain current
@ VGS=10V; TA=25°C
(b)
ID
-5.7
A
@ VGS=10V; TA=25°C
(b)
-4.6
@ VGS=10V; TA=25°C
(a)
-3.8
Pulsed drain current (c)
IDM
-17.7
A
Continuous source current (body diode) (b)
IS
-9.2
A
Pulsed source current (body diode) (c)
ISM
-17.7
A
Power dissipation at TA =25°C
(a)
Linear derating factor
PD
4.17
33.3
W
mW/°C
Power dissipation at TA =25°C
(b)
Linear derating factor
PD
9.25
74
W
mW/°C
Power dissipation at TA =25°C
(d)
Linear derating factor
PD
2.11
16.8
W
mW/°C
Operating and storage temperature range
Tj, Tstg
-55 to +150
°C
Thermal resistance
Parameter
Symbol
Limit
Unit
Junction to ambient (a)
R JA
30
°C/W
Junction to ambient (b)
R JA
13.5
°C/W
Junction to ambient (c)
R JA
59.1
°C/W



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