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TP5700AM 数据表(PDF) 7 Page - National Semiconductor (TI) |
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TP5700AM 数据表(HTML) 7 Page - National Semiconductor (TI) |
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7 / 8 page ![]() Applications Information (Continued) be added to reduce the level at the speech circuit DTMF Input For application requiring higher DTMF level the signal swing across the device can be raised by using 620X in series with 270X for RO The 270X has to be bypassed by a 10 mf capacitor in order to maintain same AC off hook im- pedance PULSE DIALING TELEPHONE The TP5700A can reduce the number of components re- quired to build a pulse dialing telephone as shown in Figure 5 The usual current source can be eliminated by using the VREG1 output to power a low-voltage (17V) series mode pulse dialer via a blocking diode A low forward-voltage drop diode such as a Schottky type is necessary because VREG1 is used in its non-regulated mode and its output volt- age may fall to 2V on a 20 mA loop A 100 mF decoupling capacitor is required to hold up the pulse dialer supply volt- age during dialing This capacitor will take about one second to charge up when the telephone is first connected to the line but thereafter the 20 MX resistor required to retain the last-number dialed memory will keep this capacitor charged Partial muting is obtained by directly connecting the N-chan- nel open-drain MUTE output of the pulse dialer to the RCV IN pin on the Speech Circuit A fully muted pulse dialer design requires the use of a shunt- mode dialer TLH5201 – 9 Low voltage drop diode (eg Schottky) Low leakage type Indicates National Semiconductor discrete transistor process number FIGURE 5 Typical Pulse Dialing Telephone 7 |
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