Electrical characteristics

STF10NK50Z

4/13

Doc ID 022992 Rev 1

2

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1 mA, VGS= 0

500

V

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 500 V

VDS = 500 V, TC = 125 °C

1

50

µA

µA

V(BR)GSO

Gate-source breakdown

voltage (ID = 0)

IGS = ±1 mA

±30

V

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20 V

±

10

µA

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 100 µA

3

3.75

4.5

V

RDS(on)

Static drain-source

on-resistance

VGS= 10 V, ID= 4.5 A

0.55

0.7

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25 V, f=1 MHz, VGS=0

-

1219

159

40

-

pF

pF

pF

Coss eq

(1)

.

1.

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

inceases from 0 to 80% VDSS

Equivalent output

capacitance

VGS=0, VDS =0 to 400 V

-806

-

pF

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=400 V, ID = 9 A

VGS =10 V

See Figure 15

-

39.2

7.42

20.7

-

nC

nC

nC

Obsolete

Product(s)

- Obsolete

Product(s)