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STGD18N40LZT4 数据表(PDF) 2 Page - STMicroelectronics |
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STGD18N40LZT4 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 16 page ![]() 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VGE = 0 V) VCES(clamped) V VECS Emitter-collector voltage (VGE = 0 V) 20 V IC Continuous collector current at TC = 100 °C 30 A ICP (1) Pulsed collector current 40 A VGE Gate-emitter voltage VGE(clamped) V PTOT Total power dissipation at TC = 25 °C 150 W ESCIS (2) Single pulse energy TC = 25 °C, L = 3 mH, VCC = 50 V 300 mJ Single pulse energy TC = 150 °C, L = 3 mH, VCC = 50 V 180 mJ ESD Human body model, R = 1.5 kΩ, C = 100 pF 8 kV Machine model, R = 0, C = 100 pF 800 V Charged device model 2 kV TSTG Storage temperature range -55 to 175 °C TJ Operating junction temperature range °C 1. Pulse width limited by max. junction temperature. 2. For ESCIS test circuit refer to Figure 14. Test circuit for inductive load switching with A and B not connected. Table 2. Thermal data Symbol Parameter Value Unit RthJC Thermal resistance, junction-to-case 1 °C/W RthJA Thermal resistance, junction-to-ambient 100 °C/W STGD18N40LZT4 Electrical ratings DS13627 - Rev 1 page 2/16 |
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