©

1996

DATA SHEET

SILICON TRANSISTOR

2SC1926

DESCRIPTION

The 2SC1926 is an NPN silicon epitaxial dual transistor that

consists of two chips equivalent to the 2SC1275, and is designed for

differential amplifier and ultra-high-speed switching applications.

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector to Base Voltage

VCBO

30

V

Collector to Emitter Voltage

VCEO

14

V

Emitter to Base Voltage

VEBO

3.0

V

Collector Current

IC

50

mA

Collector Dissipation

PC

200

mW/unit

Total Power Dissipation

PT

300

mW

Junction Temperature

Tj

200

˚C

Storage Temperature

Tstg

–65 to +200

˚C

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICES

VCE = 15 V, RBE = 0

50

nA

Emitter Cut-off Current

IEBO

VEB = 2.0 V, IC = 0

50

nA

DC Current Gain

hFE

VCE = 10 V, IC = 10 mA

25

80

200

hFE Ratio

hFE1/hFE2

VCE = 10 V, IC = 10 mA *1

0.8

1.0

Difference of Base to Emitter Voltage

∆VBE

VCE = 10 V, IC = 10 mA

30

mV

Gain Bandwidth Product

fT

VCE = 10 V, IC = 10 mA *2

1.5

2.0

GHz

Output Capacitance

Cob

VCB = 10 V, IE = 0, f = 1.0 MHz *3

1.1

1.5

pF

*1. hFE1 is the smaller hFE value of the 2 transistors.

2. Sampling check shall be done on a production lot base using a TO-18 packaged device (equivalent to the

2SC1275).

3. Measured with a 3-terminal bridge, terminals other than the collector and base of the device under test should

be connected to the guard terminal of the bridge.

Document No. P11670EJ1V0DS00 (1st edition)

Date Published July 1996 P

Printed in Japan

NPN SILICON EPITAXIAL DUAL TRANSISTOR

FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING

INDUSTRIAL USE

PACKAGE DIMENSIONS

(in millimeters)

5.0 MIN.

3.5

+0.3

–0.2

5.0 MIN.

3

2

1

4

5

6

3

2C

4

1C

6

1B

1

2B

5

E

2

PIN CONNECTIONS